Isbn: 9780792393795 - technology cad - computer simulation of ic processes and devices: 243 (12 risultati)

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hardcover. Condizione: New. In shrink wrap. Looks like an interesting title.

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Condizione: New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . .…

Condizione: New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . . Books ship from the US and Ireland.…

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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model . 400 pp. Englisch.…

Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 .…

Buch. Condizione: Neu. Technology CAD - Computer Simulation of IC Processes and Devices | Robert W. Dutton (u. a.) | Buch | The Springer International Series in Engineering and Computer Science | xvii | Englisch | 1993 | Springer | EAN 9780792393795 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.…

Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 396 pp. Englisch.…

Buch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .…