9781461408178 - Robust SRAM Designs and Analysis di Singh (15 risultati)

Hardcover. Condizione: Good. Ex-library book, usual markings. Clean text, sound binding. Quick dispatch from UK seller.

Condizione: New. In.

Condizione: New.

Hardback. Condizione: New. 2012.

Condizione: As New. Unread book in perfect condition.

Condizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

Hardcover. Condizione: Brand New. 166 pages. 9.25x6.25x0.50 inches. In Stock.

Hardback. Condizione: New. 2012.

Condizione: new. Questo è un articolo print on demand.

Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design. 180 pp. Englisch.

Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a complete and concise introduction to SRAM bitcell design and analysisOffers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysisIncludes simulation set-ups for extract.

Hardback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.

Buch. Condizione: Neu. Robust SRAM Designs and Analysis | Jawar Singh (u. a.) | Buch | xii | Englisch | 2012 | Springer | EAN 9781461408178 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.

Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis;Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 180 pp. Englisch.