Isbn: 9781848820586 - charged semiconductor defects: structure, thermodynamics and diffusion (12 risultati)

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  • Lingua: Inglese

    Editore: Springer, 2008

    1848820585 / 9781848820586

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    Condizione: New. In English.

  • Lingua: Inglese

    Editore: Springer London, 2008

    1848820585 / 9781848820586

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    Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 308 | Sprache: Englisch | Produktart: Bücher | Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.…

  • Lingua: Inglese

    Editore: Springer, 2008

    1848820585 / 9781848820586

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.…

  • Lingua: Inglese

    Editore: Springer, 2008

    1848820585 / 9781848820586

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    Condizione: New. pp. 310.

  • Lingua: Inglese

    Editore: Springer Verlag, 2008

    1848820585 / 9781848820586

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    Hardcover. Condizione: Brand New. 1st edition. 294 pages. 9.50x6.25x1.00 inches. In Stock.

  • Lingua: Inglese

    Editore: Springer, 2008

    1848820585 / 9781848820586

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    Hardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

  • Lingua: Inglese

    Editore: Springer, 2008

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    Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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  • Lingua: Inglese

    Editore: Springer London Dez 2008, 2008

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters. 308 pp. Englisch.…

  • Lingua: Inglese

    Editore: Springer London, 2008

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    Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensorsEdmund Seebauer is currently Head of Chemical and Biomolecular Engineering.…

  • Lingua: Inglese

    Editore: Springer London, Springer Dez 2008, 2008

    1848820585 / 9781848820586

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.…

  • Lingua: Inglese

    Editore: Springer, 2008

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    Condizione: New. Print on Demand pp. 310 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.

  • Lingua: Inglese

    Editore: Springer, 2008

    1848820585 / 9781848820586

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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    Condizione: New. PRINT ON DEMAND pp. 310.