9783540856115 - extended defects in germanium: fundamental and technological aspects: 118 di claeys, cor; simoen, eddy (15 risultati)
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Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.Romtrade Corp.
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.Romtrade Corp.
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Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Da: Buchpark, Trebbin, GermaniaBuchpark
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Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 324 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 168,73
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers f…undamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.
Lingua: Inglese
Editore: Springer-Verlag Berlin And Heidelberg Gmbh & Co. Kg, 2009
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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EUR 239,04
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Hardcover. Condizione: Brand New. 1st edition. 320 pages. 9.75x6.75x0.75 inches. In Stock.
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Hardcover. Condizione: Like New. Like New. book.
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condizione: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days.
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Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg Feb 2009, 2009
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 160,49
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The fir…st part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control. 324 pp. Englisch.
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Da: moluna, Greven, Germaniamoluna
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EUR 136,16
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Deals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technologyDiscusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, twins, grain bound…aries and bubbles on a crystall.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg Feb 2009, 2009
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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EUR 160,49
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first p…art covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 324 pp. Englisch.
