Computational microelectronics - 9783709103814 - strain-induced effects in advanced mosfets di sverdlov, viktor (13 risultati)

Hardcover. Condizione: Fair. Verschmutzung / Wasserschaden; Abnutzung / Risse - leicht; Gebrochener Buchrücken / Seiten oder Softcover umgeknickt. Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.…

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condizione: Used. pp. 268.

Condizione: Used. pp. 268 101 Illus.

Condizione: Used. pp. 268.

Gebunden. Condizione: New.

Condizione: New. In.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.…

Condizione: New. A brand new book in pristine condition. Showing zero signs of shelf wear, creases, or damage.

Hardcover. Condizione: Brand New. 266 pages. 9.69x6.77x0.71 inches. In Stock.

Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. 268 pp. Englisch.…

Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 268 pp. Englisch.…