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Da: BargainBookStores, Grand Rapids, MI, U.S.A.
Paperback or Softback. Condizione: New. 3-Dimensional Process Simulation. Book.
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Condizione: New. pp. 212.
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Aggiungi al carrelloCondizione: New. pp. 212 164 Figures, 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
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Aggiungi al carrelloPaperback. Condizione: Brand New. 212 pages. 9.61x6.69x0.48 inches. In Stock.
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.
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Da: Brook Bookstore On Demand, Napoli, NA, Italia
EUR 46,22
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Aggiungi al carrelloCondizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Vienna, Springer Okt 2011, 2011
ISBN 10: 3709174309 ISBN 13: 9783709174302
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 53,49
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field. 212 pp. Englisch.
Da: Biblios, Frankfurt am main, HESSE, Germania
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Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 212.
Da: moluna, Greven, Germania
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is .
Lingua: Inglese
Editore: Springer Vienna, Springer Okt 2011, 2011
ISBN 10: 3709174309 ISBN 13: 9783709174302
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 53,49
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 212 pp. Englisch.