9783709190456 - compact transistor modelling for circuit design di graaff, henk c. de c.; klaassen, francois m. (15 risultati)
Lingua: Inglese
Editore: Springer, 2012
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Lingua: Inglese
Editore: Springer, 2012
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Lingua: Inglese
Editore: Springer 2013-10-04, 2013
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Lingua: Inglese
Editore: Springer, 2012
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Editore: Springer, 2012
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Editore: Springer, 2012
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Condizione: New. pp. 374.
Lingua: Inglese
Editore: Springer Vienna, 2013
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. 372 pages. 9.61x6.69x0.84 inches. In Stock.
Lingua: Inglese
Editore: Springer, 2012
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feel…ing for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Lingua: Inglese
Editore: Springer, 2012
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Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Vienna Feb 2012, 2012
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical r…easoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. 372 pp. Englisch.
Lingua: Inglese
Editore: Springer Vienna, 2012
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Thr…ough physical reasoning, a feeling for th.
Lingua: Inglese
Editore: Springer, 2012
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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Condizione: New. Print on Demand pp. 374 184 Figures, 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
Lingua: Inglese
Editore: Springer, 2012
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. 374.
Lingua: Inglese
Editore: Springer, Springer Feb 2012, 2012
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reaso…ning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 372 pp. Englisch.
