Editore: Barneveld : Koninklijke BDU Uitgeverij B.V., 2012
ISBN 10: 9087881894 ISBN 13: 9789087881894
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Aggiungi al carrellogebundene Ausgabe. Condizione: Gut. 351 Seiten Der Erhaltungszustand des hier angebotenen Werks ist trotz seiner Bibliotheksnutzung sauber. Es befindet sich neben dem Rückenschild lediglich ein Bibliotheksstempel im Buch; ordnungsgemäß entwidmet. Buchblock vorne leicht gebrochen, aber weiter stabil. In ENGLISCHER Sprache. Sprache: Englisch Gewicht in Gramm: 760.
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Aggiungi al carrelloPaperback. Condizione: New.
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Aggiungi al carrelloCondizione: New. pp. 374 184 Figures, 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
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Aggiungi al carrelloPaperback. Condizione: Brand New. 372 pages. 9.61x6.69x0.84 inches. In Stock.
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
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Aggiungi al carrelloCondizione: gut. 1990. Compact Transistor Modelling for Circuit Design. (Computational Microelectronics) In deutscher Sprache. pages.
Da: Buchpark, Trebbin, Germania
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Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Seiten: 363 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for th.
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Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 374.
Lingua: Inglese
Editore: Springer, Springer Feb 2012, 2012
ISBN 10: 3709190452 ISBN 13: 9783709190456
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 372 pp. Englisch.