Isbn: 9783838333885 - hafnium oxide and hafnium silicate for high-k application: characterization of hafnium based oxide thin films deposited by cvd: characterization of ... for high-k application in transistors (8 risultati)

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    • Lingua: Inglese

      Editore: LAP Lambert Academic Publishing, 2010

      3838333888 / 9783838333885

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      Da: Books Puddle, New York, NY, U.S.A.Books Puddle

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      Condizione: New.

    • Lingua: Inglese

      Editore: Lap Lambert Academic Publishing, 2010

      3838333888 / 9783838333885

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      Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books

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      EUR 158,80

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      Paperback. Condizione: Brand New. 232 pages. 8.58x5.91x0.63 inches. In Stock.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing Sep 2010, 2010

      3838333888 / 9783838333885

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      Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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      Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films. 232 pp. Englisch.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing, 2010

      3838333888 / 9783838333885

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      Da: moluna, Greven, Germaniamoluna

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      Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Bhandari HarishHarish Bhandari received the Bachelors in Chemical Engineering (2000) from Bangalore University, India. He earned his M.S. and Ph.D. (2006) in Chemical Engineering at the University of Alabama. He is currently a Res.

    • Lingua: Inglese

      Editore: LAP Lambert Academic Publishing, 2010

      3838333888 / 9783838333885

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      Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

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      Condizione: New. Print on Demand.

    • Lingua: Inglese

      Editore: LAP Lambert Academic Publishing, 2010

      3838333888 / 9783838333885

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      Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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      EUR 127,13

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      Condizione: New. PRINT ON DEMAND.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing Sep 2010, 2010

      3838333888 / 9783838333885

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      Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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      EUR 79,00

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      Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 232 pp. Englisch.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing, 2010

      3838333888 / 9783838333885

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      Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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      EUR 111,91

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      Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.