9786139814923 - Ti-Based Schottky Contacts to n-InP: Electronic Device Applications di Rajagopal Reddy, Varra; Subba Reddy, D (6 risultati)

Paperback. Condizione: Brand New. 148 pages. 8.66x5.91x0.34 inches. In Stock.

Taschenbuch. Condizione: Neu. Ti-Based Schottky Contacts to n-InP: Electronic Device Applications | Varra Rajagopal Reddy (u. a.) | Taschenbuch | 148 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139814923 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development. 148 pp. Englisch.

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rajagopal Reddy VarraProf. Reddy has published more than 190 articles in referred journals, and has been author or co-author of over 125 conference papers. Prof. Reddy has successfully guided 20 PhDs in the field of Advanced Electron.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 148 pp. Englisch.

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.