9786139814923 - ti-based schottky contacts to n-inp: electronic device applications di rajagopal reddy, varra; subba reddy, d (6 risultati)
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. 148 pages. 8.66x5.91x0.34 inches. In Stock.
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Da: preigu, Osnabrück, Germaniapreigu
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Taschenbuch. Condizione: Neu. Ti-Based Schottky Contacts to n-InP: Electronic Device Applications | Varra Rajagopal Reddy (u. a.) | Taschenbuch | 148 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139814923 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]b…od[dot]de | Anbieter: preigu.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, wit…h a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development. 148 pp. Englisch.
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rajagopal Reddy VarraProf. Reddy has published more than 190 articles in referred journals, and has been author or co-author of over 125 conference papers. Prof. Reddy has successfully guided 20 PhDs i…n the field of Advanced Electron.
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a…high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 148 pp. Englisch.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 56,57
EUR 61,19 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a h…igh peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.
