Da: California Books, Miami, FL, U.S.A.
EUR 68,03
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Condizione: New.
Da: preigu, Osnabrück, Germania
EUR 52,45
Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Controlling the aging of power transistors | Reliability Challenge: Controlling transistor aging and failure under short-circuit conditions | Tarek Ben Salah (u. a.) | Taschenbuch | Englisch | 2025 | Our Knowledge Publishing | EAN 9786208939458 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.
Da: PBShop.store US, Wood Dale, IL, U.S.A.
EUR 64,65
Quantità: Più di 20 disponibili
Aggiungi al carrelloPAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
EUR 62,88
Quantità: Più di 20 disponibili
Aggiungi al carrelloPAP. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 60,90
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book presents an in-depth experimental study of the behavior of SiC JFET transistors for demanding aerospace applications. A complete methodology is described, including the design of an automated test bench via LabView, robustness tests to determine the critical energy, and accelerated aging tests to monitor the evolution of electrical parameters. The results obtained highlight reliable degradation indicators and open up interesting prospects for the design of more resistant electronic systems in extreme environments. 88 pp. Englisch.
Da: CitiRetail, Stevenage, Regno Unito
EUR 67,85
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: new. Paperback. This book presents an in-depth experimental study of the behavior of SiC JFET transistors for demanding aerospace applications. A complete methodology is described, including the design of an automated test bench via LabView, robustness tests to determine the critical energy, and accelerated aging tests to monitor the evolution of electrical parameters. The results obtained highlight reliable degradation indicators and open up interesting prospects for the design of more resistant electronic systems in extreme environments. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Da: Majestic Books, Hounslow, Regno Unito
EUR 111,38
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand.
Lingua: Inglese
Editore: Our Knowledge Publishing Jun 2025, 2025
ISBN 10: 6208939453 ISBN 13: 9786208939458
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 60,90
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book presents an in-depth experimental study of the behavior of SiC JFET transistors for demanding aerospace applications. A complete methodology is described, including the design of an automated test bench via LabView, robustness tests to determine the critical energy, and accelerated aging tests to monitor the evolution of electrical parameters. The results obtained highlight reliable degradation indicators and open up interesting prospects for the design of more resistant electronic systems in extreme environments.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 88 pp. Englisch.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 112,68
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. PRINT ON DEMAND.
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 61,63
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book presents an in-depth experimental study of the behavior of SiC JFET transistors for demanding aerospace applications. A complete methodology is described, including the design of an automated test bench via LabView, robustness tests to determine the critical energy, and accelerated aging tests to monitor the evolution of electrical parameters. The results obtained highlight reliable degradation indicators and open up interesting prospects for the design of more resistant electronic systems in extreme environments.