ISBN: 9789812568625 - mosfet modeling for vlsi simulation: theory and practice: 0 (9 risultati)

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Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

HRD. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

HRD. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

Condizione: New. In English.

Hardcover. Condizione: Brand New. illustrated edition. 632 pages. 9.50x6.50x1.25 inches. In Stock.

Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Deals with the MOS Field Effect Transistor models that are derived from basic semiconductor theory. This book discusses how to measure device model parameters required for circuit simulations. It emphasizes the assumptions used to arrive at the models, so t.…

Buch. Condizione: Neu. MOSFET MODELING FOR VLSI SIMULATION | Arora Narain | Buch | Gebunden | Englisch | 2007 | World Scientific | EAN 9789812568625 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.

Buch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.…