Lingua: Inglese
Editore: World Scientific Publishing Company, 1998
ISBN 10: 9971501422 ISBN 13: 9789971501426
Da: ThriftBooks-Dallas, Dallas, TX, U.S.A.
Hardcover. Condizione: Very Good. No Jacket. May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.
Hardcover. Condizione: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
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Aggiungi al carrelloPaperback. Condizione: Brand New. 238 pages. 9.00x6.50x0.75 inches. In Stock.
Lingua: Inglese
Editore: WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Da: Buchpark, Trebbin, Germania
EUR 66,46
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Aggiungi al carrelloCondizione: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Lingua: Inglese
Editore: WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Da: moluna, Greven, Germania
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt.
Da: preigu, Osnabrück, Germania
EUR 82,60
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Aggiungi al carrelloBuch. Condizione: Neu. INTRO TO SEMICONDUCTOR DEVICES MODELLING | Snowden C M | Buch | Gebunden | Englisch | 1987 | World Scientific | EAN 9789971501426 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 98,66
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Aggiungi al carrelloBuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.