Condizione: As New. Unread book in perfect condition.
EUR 15,71
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread copy in mint condition.
Condizione: New.
EUR 16,49
Quantità: 12 disponibili
Aggiungi al carrelloCondizione: New.
EUR 18,76
Quantità: 12 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 22,67
Quantità: 20 disponibili
Aggiungi al carrelloCondizione: New. In.
Hardcover. Condizione: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
Hardcover. Condizione: Fine. No Jacket. 1st Edition. Springer-Verlag pictorial hardcover sans jacket (as issued), 1989, clean/tight, No marks or signs of use and No "shelf wear"; (Fine). We will bubble wrap the book and ship it in a New BOX- Not a plastic bag like the zombie sellers.
Lingua: Inglese
Editore: Institute Of Economic Affairs, 2018
ISBN 10: 025536749X ISBN 13: 9780255367493
Da: MostlyAcademic, Berrima, NSW, Australia
EUR 12,66
Quantità: 1 disponibili
Aggiungi al carrelloSoft cover. Condizione: Near Fine.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 54,25
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 56,68
Quantità: 13 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 54,35
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condizione: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves USA, OSWEGO, IL, U.S.A.
EUR 63,77
Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Prima edizione
EUR 32,20
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 52,04
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
EUR 21,79
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Eating sugary food, drinking alcohol and smoking are legal. But politicians still use laws to discourage them. What can justify such paternalism? Killjoys reviews the justifications that have been offered: from the idea that people are irrational to the i.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 57,48
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 60,13
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
EUR 56,95
Quantità: 10 disponibili
Aggiungi al carrelloPF. Condizione: New.
Editore: Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Da: Antiquariaat Ovidius, Bredevoort, Paesi Bassi
EUR 24,00
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Gebraucht / Used. 1986. Hardcover. xv,222pp.
Condizione: New. pp. 300.
EUR 59,62
Quantità: 1 disponibili
Aggiungi al carrelloGood. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.
Lingua: Inglese
Editore: World Scientific Pub Co Inc, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Revaluation Books, Exeter, Regno Unito
EUR 75,03
Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
Lingua: Inglese
Editore: London School Of Economics And Political Science Jan 2018, 2018
ISBN 10: 025536749X ISBN 13: 9780255367493
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 25,65
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Neuware - 'This publication is based on research that forms part of the Paragon Initiative.'.
EUR 88,39
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 78,82
Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 296 pages. 9.25x6.10x0.68 inches. In Stock.
EUR 90,59
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 107,54
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves USA United, OSWEGO, IL, U.S.A.
EUR 66,03
Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.