Compound semiconductors strained layers (24 risultati)
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Compound Semiconductors Strained Layers and Devices
. Ed(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van
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Condizione: New. Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined S…tark Effects. Editor(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 669. . 2000. Hardback. . . . .
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Condizione: Gut. Zustand: Gut | Seiten: 356 | Sprache: Englisch | Produktart: Bücher | During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain.… 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-…1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 ha…ve been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
Compound Semiconductors Strained Layers and Devices (Electronic Materials Series)
Jain, Suresh (Editor) / Willander, Magnus (Editor) / Van Overstraeten, R. (Editor)
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. 349 pages. 9.30x6.20x0.80 inches. In Stock.
Compound Semiconductors Strained Layers and Devices
. Ed(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van
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Da: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
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Condizione: New. Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined S…tark Effects. Editor(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 669. . 2000. Hardback. . . . . Books ship from the US and Ireland.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible…by strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them. 352 pp. Englisch.
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties. 7. Strain…ed layer optoelectronic devices. 8. T.
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties.… 7. Strained layer optoelectronic devices. 8. T.
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Taschenbuch. Condizione: Neu. Compound Semiconductors Strained Layers and Devices | Suresh Jain (u. a.) | Taschenbuch | xii | Englisch | 2014 | Springer | EAN 9781461370000 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu P…rint on Demand.
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Buch. Condizione: Neu. Compound Semiconductors Strained Layers and Devices | Suresh Jain (u. a.) | Buch | xii | Englisch | 2000 | Springer US | EAN 9780792377696 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Dem…and.
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain.…1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 356 pp. Englisch.
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by s…train. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 352 pp. Englisch.
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Condizione: New. Print on Demand pp. 352 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
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Condizione: New. Print on Demand pp. 352 Illus.
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Condizione: New. PRINT ON DEMAND pp. 352.
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Condizione: New. PRINT ON DEMAND pp. 352.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by stra…in. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them. 356 pp. Englisch.
