Editore: LAP LAMBERT Academic Publishing Okt 2012, 2012
ISBN 10: 3659263893 ISBN 13: 9783659263897
Lingua: Inglese
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 49,00
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Neuware -During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today¿s embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region.Books on Demand GmbH, Überseering 33, 22297 Hamburg 92 pp. Englisch.
Editore: Lap Lambert Academic Publishing, 2012
ISBN 10: 3659263893 ISBN 13: 9783659263897
Lingua: Inglese
Da: Revaluation Books, Exeter, Regno Unito
EUR 94,94
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Aggiungi al carrelloPaperback. Condizione: Brand New. 92 pages. 8.66x5.91x0.21 inches. In Stock.
Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659263893 ISBN 13: 9783659263897
Lingua: Inglese
Da: moluna, Greven, Germania
EUR 41,05
Convertire valutaQuantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Srivastava GeetikaDr. Geetika Srivastava, M.Tech., Ph.D.(Electronics). Has more than 8 years of teaching and research experience and published many reputed international journal research papers. Qualified UGC-NET Examination in Elect.
Editore: LAP LAMBERT Academic Publishing Okt 2012, 2012
ISBN 10: 3659263893 ISBN 13: 9783659263897
Lingua: Inglese
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 49,00
Convertire valutaQuantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today's embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region. 92 pp. Englisch.
Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659263893 ISBN 13: 9783659263897
Lingua: Inglese
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 49,00
Convertire valutaQuantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today's embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region.