Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Symposium Held April 10–12, 2007, San Francisco, California, U.S.A. - Brossura
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990: Symposium Held April 10-12, ... California, U.S.A. (MRS Proceedings)
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 (Paperback)
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Paperback. Condizione: new. Paperback. In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Codice articolo 9781107408715
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.: Volume 990
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990: Symposium Held April 10-12, ... California, U.S.A. (MRS Proceedings)
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- And Nanoelectronics: Volume 990: Symposium Held April 10 12, 20
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990: Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.
Editore:
Cambridge University Press, 2014
ISBN 10: 1107408717
ISBN 13: 9781107408715
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro - and Nanoelectronics
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 (Paperback)
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Cambridge University Press, Cambridge, 2014
ISBN 10: 1107408717
ISBN 13: 9781107408715
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Paperback. Condizione: new. Paperback. In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Codice articolo 9781107408715
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