This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
EUR 29,47 per la spedizione da Regno Unito a Italia
Destinazione, tempi e costiEUR 9,70 per la spedizione da Germania a Italia
Destinazione, tempi e costiDa: moluna, Greven, Germania
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent . Codice articolo 449334530
Quantità: Più di 20 disponibili
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. 480 pp. Englisch. Codice articolo 9783709119112
Quantità: 2 disponibili
Da: AHA-BUCH GmbH, Einbeck, Germania
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Twelfth International Conference on Simulation of Semiconductor Processes and Devices' (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites. Codice articolo 9783709119112
Quantità: 1 disponibili
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Taschenbuch. Condizione: Neu. Neuware -The 'Twelfth International Conference on Simulation of Semiconductor Processes and Devices' (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 480 pp. Englisch. Codice articolo 9783709119112
Quantità: 2 disponibili
Da: Ria Christie Collections, Uxbridge, Regno Unito
Condizione: New. In. Codice articolo ria9783709119112_new
Quantità: Più di 20 disponibili
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 480. Codice articolo 26378369692
Quantità: 4 disponibili
Da: Majestic Books, Hounslow, Regno Unito
Condizione: New. Print on Demand pp. 480. Codice articolo 385534275
Quantità: 4 disponibili
Da: Biblios, Frankfurt am main, HESSE, Germania
Condizione: New. PRINT ON DEMAND pp. 480. Codice articolo 18378369686
Quantità: 4 disponibili
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
Condizione: New. Codice articolo ABLIING23Mar3113020323593
Quantità: Più di 20 disponibili
Da: Revaluation Books, Exeter, Regno Unito
Paperback. Condizione: Brand New. reprint edition. 480 pages. 9.25x6.10x1.09 inches. In Stock. Codice articolo x-3709119111
Quantità: 2 disponibili