Emerging Resistive Switching Memories

Jianyong Ouyang

ISBN 10: 3319315706 / ISBN 13: 9783319315706

Editore: Springer International Publishing, Springer Nature Switzerland Jul 2016, 2016

Riguardo questo articolo

Neuware -This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 104 pp. Englisch.

Codice articolo 9783319315706

Dati bibliografici

• Titolo: Emerging Resistive Switching Memories
• Editore: Springer International Publishing, Springer Nature Switzerland Jul 2016
• Data di pubblicazione: 2016
• Lingua: Inglese
• ISBN 10: 3319315706
• ISBN 13: 9783319315706
• Rilegatura: Taschenbuch
• Condizione: Neu
• Dimensioni: 235 L x 155 A x 7 P (millimetri) 235 millimetri di larghezza per 155 millimetri di altezza per 7 millimetri di profondità
• Peso: 172 grammi

Descrizione articolo

Riassunto

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Informazioni sull?autore

Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.