Emerging Resistive Switching Memories (SpringerBriefs in Materials)

Ouyang, Jianyong

ISBN 10: 3319315706 / ISBN 13: 9783319315706

Editore: Springer, 2016

Riguardo questo articolo

Used - Very Good.

Codice articolo 46- a - 00025

Dati bibliografici

• Titolo: Emerging Resistive Switching Memories (SpringerBriefs in Materials)
• Editore: Springer
• Data di pubblicazione: 2016
• Lingua: Inglese
• ISBN 10: 3319315706
• ISBN 13: 9783319315706
• Rilegatura: Brossura
• Condizione: Very Good

Descrizione articolo

Riassunto

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Informazioni sull?autore

Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.