Introduction to Junctionless Double Gate MOSFET

Dhiman, Gaurav; Pourush, Rajeev

ISBN 10: 6139462487 / ISBN 13: 9786139462483

Editore: LAP LAMBERT Academic Publishing, 2019

Riguardo questo articolo

Codice articolo 26397281152

Dati bibliografici

• Titolo: Introduction to Junctionless Double Gate MOSFET
• Editore: LAP LAMBERT Academic Publishing
• Data di pubblicazione: 2019
• Lingua: Inglese
• ISBN 10: 6139462487
• ISBN 13: 9786139462483
• Rilegatura: Brossura
• Condizione: New

Descrizione articolo

Riassunto

The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.