Andreas pawlak (21 risultati)
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Lingua: Inglese
Editore: TUDpress Verlag der Wissenschaften GmbH 2015-11 2015
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Da: Chiron Media, Wallingford, , Regno UnitoChiron Media
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Da: preigu, Osnabrück, Germaniapreigu
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Taschenbuch. Condizione: Neu. Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors | Andreas Pawlak | Taschenbuch | 232 S. | Englisch | 2015 | TUDpress Verlag der Wissenschaften GmbH | EAN 9783959080286 | Verantwortliche Person für die EU: TUDpress Verlag der Wissenschaften Dresden GmbH, Bergstr. 70, 01069 D…resden, mail[at]tudpress[dot]de | Anbieter: preigu.
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Da: Buchpark, Trebbin, , GermaniaBuchpark
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Condizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurat…e compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Condizione: As New. Unread book in perfect condition.
Editore: Verlag Rudolf Winkelmann, Recklinghausen 1985
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Da: Antiquariat Kastanienhof, Pirna, GermaniaAntiquariat Kastanienhof
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EUR 9,50
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Hardcover. Condizione: Gut. 15 x 22 cm illustrierter Original-Pappband ohne Schutzumschlag Einband hinten leicht beschädigt, Buchrücken leicht bestoßen, Vorsatz und Schnitt leicht fleckig, sonst GUTES EXEMPLAR---Zeichnungen von: Frank Casper und Anja Klinkner. Für Ihre Zufriedenheit versenden wir mit DHL und ausschließlich mit T…rackingcode für eine sichere Sendungsverfolgung! Weitere Angebote unter antiquariat-kastanienhof , 149 Seiten. nein.
Editore: 1 Ffm: Ullstein (); 2 Ffm: Suhrkamp (2000); 3 Mchn: Goldmann (2001); 4 Mchn: Heyne (1981); 5 Hbg: Hoffmann und Campe (1979); 6 Bln: Ullstein (1996); 7 Mchn: Goldmann (1983); 8 Ffm: Röderberg (1981); 9 Ffm: Fischer (1979) 1981
Da: Libresso - das Antiquariat in der Uni, Koethel, KREIS, GermaniaLibresso - das Antiquariat in der Uni
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EUR 72,00
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Alle Okrt., 1. - 7. Kl8°, 8., 9. 8°. 281, 586, 543, 477, 271, 351, 412, 164, 416 S. (Z.T.mit leichten Altersspuren, durchweg gute bis gut brauchbare Exemplare, z. T. neuwertig). Abgabe der 9 Titel nur zusammen. Als kostenlose Zugabe: Albert Speer. Erinnerungen Ffm: Ullstein (1969). Okrt., 608 S., Kl8°. (Leichte Altersspuren, gut…es Exemplar) 1 2500 gr. 0.0.
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Da: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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PAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK
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PAP. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Da: Majestic Books, Hounslow, , Regno UnitoMajestic Books
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EUR 49,35
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Condizione: New. Print on Demand pp. 234.
Lingua: Inglese
Editore: Tudpress Verlag Der Wissenschaften Gmbh Nov 2015 2015
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, , GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the…systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented. 232 pp. Englisch.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New. Print on Demand pp. 234.
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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EUR 49,77
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Condizione: New. PRINT ON DEMAND pp. 234.
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Da: moluna, Greven, , Germaniamoluna
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EUR 32,80
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and com…plexity of the systems, accurate compact .
Lingua: Inglese
Editore: Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh Nov 2015 2015
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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EUR 32,80
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the syst…ems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.TUDpress, Hüblerstraße 26, 01309 Dresden 232 pp. Englisch.
Lingua: Inglese
Editore: Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh 2015
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 32,80
EUR 61,71 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the syste…ms, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
