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Taschenbuch. Condizione: Neu. Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors | Andreas Pawlak | Taschenbuch | 232 S. | Englisch | 2015 | TUDpress | EAN 9783959080286 | Verantwortliche Person für die EU: TUDpress Verlag der Wissenschaften Dresden GmbH, Bergstr. 70, 01069 Dresden, mail[at]tudpress[dot]de | Anbieter: preigu.

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Condizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.

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Alle Okrt., 1. - 7. Kl8°, 8., 9. 8°. 281, 586, 543, 477, 271, 351, 412, 164, 416 S. (Z.T.mit leichten Altersspuren, durchweg gute bis gut brauchbare Exemplare, z. T. neuwertig). Abgabe der 9 Titel nur zusammen. Als kostenlose Zugabe: Albert Speer. Erinnerungen Ffm: Ullstein (1969). Okrt., 608 S., Kl8°. (Leichte Altersspuren, gutes Exemplar) 1 2500 gr. 0.0.

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Condizione: New. Print on Demand pp. 234.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented. 232 pp. Englisch.

Condizione: New. Print on Demand pp. 234.

Condizione: New. PRINT ON DEMAND pp. 234.

Kartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact .

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.TUDpress, Hüblerstraße 26, 01309 Dresden 232 pp. Englisch.

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.