Deal b e (54 risultati)
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
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Da: BooksRun, Philadelphia, PA, U.S.A.BooksRun
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EUR 11,66
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Hardcover. Condizione: Very Good. With dust jacket. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L,Hargrave PhD, Terry,Deal BSE, Nan,Hargrave MA, Sharon
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Da: HPB-Diamond, Dallas, TX, U.S.A.HPB-Diamond
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EUR 9,59
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hardcover. Condizione: Very Good. Connecting readers with great books since 1972! Used books may not include companion materials, and may have some shelf wear or limited writing. We ship orders daily and Customer Service is our top priority.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
- Rilegato
Da: Goodwill Books, Hillsboro, OR, U.S.A.Goodwill Books
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EUR 9,54
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Condizione: acceptable. Fairly worn, but readable and intact. If applicable: Dust jacket, disc or access code may not be included.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
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Da: Upward Bound Books, VALRICO, FL, U.S.A.Upward Bound Books
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EUR 9,27
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Condizione: good. Gently used with light wear to the cover, corners, or spine. Pages are clean and free of writing or highlighting. Binding is tight and fully intact. Dust jacket included with hardcover books. Ships fast in a protective poly mailerâ"Monday through Friday, excluding weekends and holidays.
The Mindful Marriage Create Yo
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
- Rilegato
Da: World of Books (was SecondSale), Montgomery, IL, U.S.A.World of Books (was SecondSale)
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Buono
EUR 14,65
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Condizione: Good. Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
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Da: California Books, Miami, FL, U.S.A.California Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 18,67
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Condizione: New.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
- Rilegato
Da: California Books, Miami, FL, U.S.A.California Books
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EUR 24,01
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Condizione: New.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 22,64
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Condizione: New.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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EUR 23,54
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Condizione: New.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
- Rilegato
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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EUR 28,34
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Condizione: New.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
- Rilegato
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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EUR 38,23
EUR 9,95 spedizioneSpedito da Germania a U.S.A.Quantità: 3 disponibili
Condizione: New.
- Brossura
Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 226,60
EUR 13,94 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. In.
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 226,60
EUR 13,94 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. In.
- Brossura
Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 226,60
EUR 13,94 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. In.
- Rilegato
Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 226,60
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Condizione: New. In.
- Rilegato
Da: Buchpark, Trebbin, GermaniaBuchpark
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Ottimo
EUR 162,00
EUR 105,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 524 | Sprache: Englisch | Produktart: Bücher | The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This…symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 280,70
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Condizione: New. pp. 520.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 281,38
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Condizione: New. pp. 572.
- Rilegato
Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 283,24
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Condizione: New. pp. 524.
- Rilegato
Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 283,62
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Condizione: New. pp. 572.
- Brossura
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 223,11
EUR 63,90 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The first international symposium on the subject 'The Physics and Chemistry of Si02 and the Si-Si02 Interface,' organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium cont…ained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on 'The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
- Brossura
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 223,11
EUR 64,28 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not on…ly in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the 'International Topical Conference on the Physics of Si02 and its Interfaces' held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
- Rilegato
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 225,03
EUR 65,86 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The first international symposium on the subject 'The Physics and Chemistry of Si02 and the Si-Si02 Interface,' organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained s…ixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on 'The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
- Rilegato
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 225,03
EUR 66,30 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in t…he field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the 'International Topical Conference on the Physics of Si02 and its Interfaces' held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
- Brossura
Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 303,64
EUR 14,55 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Paperback. Condizione: Brand New. reprint edition. 519 pages. 9.25x6.10x1.05 inches. In Stock.
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 304,41
EUR 14,55 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Paperback. Condizione: Brand New. 570 pages. 9.30x6.20x1.30 inches. In Stock.
Editore: 0
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Da: David H. Gerber Books (gerberbooks), Austin, TX, U.S.A.David H. Gerber Books (gerberbooks)
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Ottimo
EUR 88,91
EUR 3,88 spedizioneSpedito in U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloSaddle-stapled wrappers. Condizione: Fine. no date, no publishing information unpaginated [68pp inside covers] Size: 8vo - over 7¾ - 9¾" tall. B&w drawings (illustratore). Book.
Editore: 0
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Da: David H. Gerber Books (gerberbooks), Austin, TX, U.S.A.David H. Gerber Books (gerberbooks)
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Ottimo
EUR 88,91
EUR 3,88 spedizioneSpedito in U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloSaddle-stapled wrappers. Condizione: Fine. no date, no publishing information unpaginated [68pp inside covers] Size: 8vo - over 7¾ - 9¾" tall. B&w drawings (illustratore). Book.
The Mindful Marriage: Create Your Best Relationship Through Understanding and Managing Yourself
Deal MMFT, Ron L; Deal BSE, Nan; Hargrave PhD, Terry; Hargrave MA, Sharon
- Brossura
- Print on Demand
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 24,70
EUR 9,95 spedizioneSpedito da Germania a U.S.A.Quantità: 4 disponibili
Condizione: New. PRINT ON DEMAND.
Altre immaginiEditore: American Institute of Physics, 1965
- Brossura
- Prima edizione
Da: Open Boat Booksellers, Amherst, MA, U.S.A.Open Boat Booksellers
Contatta il venditoreVenditore con 5 stelleMembro dell’associazione: ABAA
Condizione: Usato
EUR 177,82
EUR 4,27 spedizioneSpedito in U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloSoft cover. 1st Edition. Single issue of Journal of Applied Physics, Volume 35, Number 12, December 1965. Contains the article "General Relationship for the Thermal Oxidation of Silicon" by Andrew Grove, the future CEO of Intel. First edition. Wraps. Moderate external wear, with fraying to top right corner of front cover and pag…es and chipping to base of spine with loss of some paper.
