Raed amro (6 risultati)
- Brossura
Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 93,04
EUR 11,61 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Paperback. Condizione: Brand New. 136 pages. 8.66x5.91x0.31 inches. In Stock.
- Brossura
Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 47,95
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Life-Time Estimation of Modern Power Electronics Devices | Power cycling capability of advanced packaging and interconnection technologies at high temperature swings | Raed Amro | Taschenbuch | 136 S. | Englisch | 2017 | Noor Publishing | EAN 9783330852563 | Verantwortliche Person für die EU: preigu… GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
- Brossura
- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 55,90
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. C…ompared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. 136 pp. Englisch.
- Brossura
- Print on Demand
Da: moluna, Greven, Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 46,18
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Amro RaedDr Raed Amro holds a doctoral degree in electrical engineering from the Technical University of Chemnitz in Germany.works as Professor at Palestine Polytechnic University in Hebron-Palestine.D…ue to the increasing advanc.
- Brossura
- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 55,90
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within ¿s is possible. Thereby a dissipation power up to 400W per chip is generated. Compar…ed to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated (Books on Demand GmbH, Überseering 33, 22297 Hamburg 136 pp. Englisch.
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- Print on Demand
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 56,57
EUR 61,11 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compar…ed to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.
