Yawei jin (4 risultati)
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Da: preigu, Osnabrück, Germaniapreigu
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EUR 57,95
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Simulation Methodology to Compare Alternatives to Silicon Device | Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device? | Yawei Jin | Taschenbuch | Englisch | VDM Verlag Dr. Müller | EAN 9783639105605 | Ve…rantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
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Da: moluna, Greven, Germaniamoluna
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EUR 52,71
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Kartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Jin YaweiYawei Jin was born in 1979.He got his PhD from North Carolina nState University in 2006.His work focuses on simulation and nmodeling of nano-scale logic devices includ…ing novel structurenand III-nitride based devices for alt.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 68,82
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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials,such as Ga…llium Nitride(GaN), into Fully-Depleted SOI(FDSOI) transistor architectures.Novel Structures are the most promising candidates for logic devices with sub-20nm gate length. They can increase gate control and suppress short channel effects. To compare the feasibility of these different structures and to project the device performance, technology CAD (TCAD) simulation is a reasonable method.The III-V semiconductors, such as Gallium Nitride (GaN), have high maximum electron drift velocities and ballistic mean free paths, which would enable high-speed transistor operation at very low voltages with gate lengths below 10nm. Since it s impracticalfor experiments currently, TCAD simulation can be used to project performance goals for aggressively scaled devices.This research focus on the methodology to compare different technologies for alternativeto Silicon based traditional logic device using TCAD simulations.
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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EUR 133,20
EUR 11,56 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Paperback. Condizione: Brand New. 188 pages. 8.66x5.91x0.46 inches. In Stock. This item is printed on demand.
