9780470013601 - dielectric films for advanced microelectronics (16 risultati)
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Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK
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HRD. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
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Dielectric Films for Advanced Microelectronics
Baklanov, Mikhail (EDT); Green, Martin (EDT); Maex, Karen (EDT)
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Dielectric Films for Advanced Microelectronics
Baklanov, Mikhail (EDT); Green, Martin (EDT); Maex, Karen (EDT)
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Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Dielectric Films for Advanced Microelectronics
Baklanov, Mikhail (EDT); Green, Martin (EDT); Maex, Karen (EDT)
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Dielectric Films for Advanced Microelectronics
Baklanov, Mikhail (EDT); Green, Martin (EDT); Maex, Karen (EDT)
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Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Karen Maex, IMEC Fellow, Silicon Process and Device Technology Division, Leuven, Belgium & Professor at Katholieke Universiteit LeuvenMikhail R. Baklanov, Principal Scientist, Silicon Process and Device Technology Division, IMEC, Leuven, BelgiumIMEC is the .
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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Condizione: New. pp. 508 Illus.
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Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrlandaKennys Bookshop and Art Galleries Ltd.
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EUR 305,58
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Condizione: New. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Editor(s): Baklanov, Mikhail R.; Maex, Karen; Green, Martin.…Series: Wiley Series in Materials for Electronic & Optoelectronic Applications. Num Pages: 508 pages, Illustrations. BIC Classification: TJF. Category: (P) Professional & Vocational. Dimension: 249 x 177 x 34. Weight in Grams: 1102. . 2007. 1st Edition. Hardcover. . . . .
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 339,80
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Condizione: New. pp. 508.
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Da: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
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EUR 391,92
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Condizione: New. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Editor(s): Baklanov, Mikhail R.; Maex, Karen; Green, Martin.…Series: Wiley Series in Materials for Electronic & Optoelectronic Applications. Num Pages: 508 pages, Illustrations. BIC Classification: TJF. Category: (P) Professional & Vocational. Dimension: 249 x 177 x 34. Weight in Grams: 1102. . 2007. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 327,17
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Buch. Condizione: Neu. Neuware - The dielectric properties of silicon dioxide (SiO2), such as high resistivity and excellent dielectric strength, have aided the evolution of microelectronics during the past 40 years. Silica films have been successfully used over this period for both gate and interconnect applications in ultra la…rge-scale integration (ULSI) devices. Dielectric films for gate applications need to have a higher dielectric constant, while interconnect dielectric materials need to have a lower dielectric constant, compared with SiO2. In order to maintain the high drive current and gate capacitance required of scaled MOSFETs (metal-oxide-silicon field effect transistors), SiO2 gate dielectrics have decreased in thickness to less than 2 nm today, with a continued effort to shrink to the thickness below 1 nm. However, SiO2 layers thinner than 1.2 nm do not have the insulating properties required of a gate dielectric and ultrathin SiO2 gate dielectrics give rise to a number of problems, such as high gate leakage current and reliability degradation. Therefore, alternative gate dielectric materials are required.SiO2, having been the universal dielectric material for both gate and interlayer dielectric (ILD) applications for many years, must be replaced by materials with a higher dielectric constant for the gate applications and a reduced dielectric constant for interconnect applications. Replacements for silicon dioxide, such as HfO2, ZrO2, and Al2O3, for introduction as high-k dielectrics (described in the central section of the book), have material properties that are quite different compared with those of traditional dense SiO2 and these differences create many technological challenges that are the subject of intensive research. In addition, not only the development of new gate materials but also re-engineering of many technological processes is needed. For example, in the case of low-k materials (discussed in the first section of the book), active species formed during different technological processes diffuse into the pores and create severe damage. All these problems have been stimulating the development of new technological approaches, which will be dealt with in this book.This book presents an in-depth overview of novel developments made by scientific leaders in the microelectronics community. It covers a broad range of related topics, from physical principles to design, fabrication, characterization, and application of novel dielectric films. This book is intended for postgraduate level students, PhD students and industrial researchers, to enable them to gain insight into this important area of research.
Dielectric Films for Advanced Microelectronics
Baklanov, Mikhail (Editor)/ Maex, Karen (Editor)/ Green, Martin (Editor)
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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EUR 431,80
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Hardcover. Condizione: Brand New. 1st edition. 508 pages. 9.75x6.75x1.50 inches. In Stock.
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- Prima edizione
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Da: CitiRetail, Stevenage, Regno UnitoCitiRetail
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EUR 260,90
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Hardcover. Condizione: new. Hardcover. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, h…igh-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Dielectric Films for Advanced Microelectronics
Baklanov, Mikhail (Editor)/ Maex, Karen (Editor)/ Green, Martin (Editor)
- Rilegato
- Print on Demand
Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 346,52
EUR 17,59 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Hardcover. Condizione: Brand New. 1st edition. 508 pages. 9.75x6.75x1.50 inches. In Stock. This item is printed on demand.
