Isbn: 9783030261740 - long-term reliability of nanometer vlsi systems: modeling, analysis and optimization (13 risultati)

Condizione: New. In English.

Condizione: New. pp. XLI, 460 211 illus., 195 illus. in color. 1st ed. 2019 edition NO-PA16APR2015-KAP.

Condizione: New.

Taschenbuch. Condizione: Neu. Long-Term Reliability of Nanometer VLSI Systems | Modeling, Analysis and Optimization | Sheldon Tan (u. a.) | Taschenbuch | xli | Englisch | 2020 | Springer International Publishing | EAN 9783030261740 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Condizione: New.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.…

Paperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condizione: new. Questo è un articolo print on demand.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. 504 pp. Englisch.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying .…

Condizione: New. Print on Demand pp. XLI, 460 211 illus., 195 illus. in color.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 504 pp. Englisch.…

Condizione: New. PRINT ON DEMAND pp. XLI, 460 211 illus., 195 illus. in color.