9783844332636 - an improved markov random field design approach for digital circuits: introducing fault-tolerance with higher noise-immunity for the nano-circuits as compared to cmos and mrf designs di anwer, jahanzeb; hisham bin hamid, nor; sagayan asirvadam, vijanth (9 risultati)

Perfeziona la tua ricerca

  • Libri (9)

a

Fascia di prezzo personalizzata (EUR)

a

    • Lingua: Inglese

      Editore: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011

      3844332634 / 9783844332636

      • Brossura

      Da: Books Puddle, New York, NY, U.S.A.Books Puddle

      Venditore con 4 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 76,60

      EUR 3,43 spedizione 
      Spedito in U.S.A.

      Quantità: 4 disponibili

      Condizione: New. pp. 88.

    • Condizione: Nuovo

      EUR 43,40

      EUR 70,00 spedizione 
      Spedito da Germania a U.S.A.

      Quantità: 5 disponibili

      Taschenbuch. Condizione: Neu. An Improved Markov Random Field Design Approach For Digital Circuits | Introducing Fault-Tolerance With Higher Noise-Immunity For The Nano-Circuits As Compared To CMOS And MRF Designs | Jahanzeb Anwer (u. a.) | Taschenbuch | 88 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783844332636 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

    • Condizione: Usato - Come nuovo

      EUR 121,19

      EUR 29,13 spedizione 
      Spedito da Regno Unito a U.S.A.

      Quantità: 1 disponibili

      Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing Mai 2011, 2011

      3844332634 / 9783844332636

      • Brossura
      • Print on Demand

      Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

      Venditore con 5 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 49,00

      EUR 23,00 spedizione 
      Spedito da Germania a U.S.A.

      Quantità: 2 disponibili

      Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives. 88 pp. Englisch.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing, 2011

      3844332634 / 9783844332636

      • Brossura
      • Print on Demand

      Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

      Venditore con 5 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 50,96

      EUR 30,50 spedizione 
      Spedito da Germania a U.S.A.

      Quantità: 1 disponibili

      Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives.

    • Lingua: Inglese

      Editore: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011

      3844332634 / 9783844332636

      • Brossura
      • Print on Demand

      Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

      Venditore con 4 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 76,67

      EUR 7,57 spedizione 
      Spedito da Regno Unito a U.S.A.

      Quantità: 4 disponibili

      Condizione: New. Print on Demand pp. 88 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

    • Lingua: Inglese

      Editore: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011

      3844332634 / 9783844332636

      • Brossura
      • Print on Demand

      Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

      Venditore con 4 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 79,36

      EUR 9,95 spedizione 
      Spedito da Germania a U.S.A.

      Quantità: 4 disponibili

      Condizione: New. PRINT ON DEMAND pp. 88.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing, 2011

      3844332634 / 9783844332636

      • Brossura
      • Print on Demand

      Da: moluna, Greven, Germaniamoluna

      Venditore con 5 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 41,05

      EUR 48,99 spedizione 
      Spedito da Germania a U.S.A.

      Quantità: Più di 20 disponibili

      Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Anwer JahanzebThe authors work under the banner of fault-tolerance research group in Universiti Teknologi PETRONAS (UTP). The group is conducting research on various aspects of fault-tolerant circuit design with the support of UTP an.

    • Lingua: Inglese

      Editore: LAP LAMBERT Academic Publishing Mai 2011, 2011

      3844332634 / 9783844332636

      • Brossura
      • Print on Demand

      Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

      Venditore con 5 stelle
      Contatta il venditore

      Condizione: Nuovo

      EUR 49,00

      EUR 60,00 spedizione 
      Spedito da Germania a U.S.A.

      Quantità: 1 disponibili

      Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 88 pp. Englisch.