9789811512117 - ferroelectric-gate field effect transistor memories: device physics and applications: 131 (10 risultati)
Lingua: Inglese
Editore: Singapore, Springer., 2020
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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2nd ed. 2020. XIV, 425 p. Hardcover. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Topics in Applied Physics, 131. Sprache: Englisch.
Lingua: Inglese
Editore: Springer, 2020
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 139,09
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory… has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Lingua: Inglese
Editore: Springer, 2020
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 215,61
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Condizione: New.
Lingua: Inglese
Editore: Springer, 2020
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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EUR 259,99
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Hardcover. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: Springer, 2020
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Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Nature Singapore Mrz 2020, 2020
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferr…oelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 440 pp. Englisch.
Ferroelectric-Gate Field Effect Transistor Memories
Park, Byung-Eun|Ishiwara, Hiroshi|Okuyama, Masanori|Sakai, Shigeki|Yoon, Sung-Min
Lingua: Inglese
Editore: Springer Nature Singapore, 2020
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Demonstrates that technology field of transistor-type ferroelectric memory has great impacts on both fundamental device physics and commercial industrial opportunitiesDeals with an insightful review to all the key te…chnologies and applic.
Lingua: Inglese
Editore: Springer, Springer Mär 2020, 2020
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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EUR 160,49
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroele…ctric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 440 pp. Englisch.
Lingua: Inglese
Editore: Springer, 2020
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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EUR 224,68
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Condizione: New. Print on Demand.
Lingua: Inglese
Editore: Springer, 2020
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND.
