9789811512148 - ferroelectric-gate field effect transistor memories: device physics and applications: 131 (15 risultati)
Ferroelectric-Gate Field Effect Transistor Memories. Device Physics and Applications.
Park, Byung-Eun/Ishiwara, Hiroshi/Okuyama, Masanori/Sakai, Shigeki/Yoon, Sung-Min (Hrsg.)
Lingua: Inglese
Editore: Singapore, Springer Singapore. 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, , GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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2nd ed. 2020. 16 x 24 cm. XIV, 425 S. XIV, 425 p. 313 illus., 183 illus. in color. Softcover (Topics in Applied Physics). Sprache: Englisch.
Ferroelectric-gate Field Effect Transistor Memories : Device Physics and Applications
Park, Byung-eun (EDT); Ishiwara, Hiroshi (EDT); Okuyama, Masanori (EDT); Sakai, Shigeki (EDT); Yoon, Sung-min (EDT)
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Condizione: New.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New.
Lingua: Inglese
Editore: Springer 2021
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Condizione: New.
Ferroelectric-gate Field Effect Transistor Memories : Device Physics and Applications
Park, Byung-eun (EDT); Ishiwara, Hiroshi (EDT); Okuyama, Masanori (EDT); Sakai, Shigeki (EDT); Yoon, Sung-min (EDT)
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Condizione: As New. Unread book in perfect condition.
Altre immaginiLingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: preigu, Osnabrück, Germaniapreigu
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Taschenbuch. Condizione: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | Topics in Applied Physics | xiv | Englisch | 2021 | Springer | EAN 9789811512148 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelbe…rg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer, Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric… memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Lingua: Inglese
Editore: Springer Nature 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Revaluation Books, Exeter, , Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. 2nd edition. 439 pages. 9.25x6.10x1.06 inches. In Stock.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Paperback. Condizione: New. New. book.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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- Print on Demand
Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Nature Singapore Mrz 2021 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, , GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-ty…pe ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 440 pp. Englisch.
Lingua: Inglese
Editore: Springer Nature Singapore 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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- Print on Demand
Da: moluna, Greven, , Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Demonstrates that technology field of transistor-type ferroelectric memory has great impacts on both fundamental device physics and commercial industrial opportunitiesDeals with an insightful review to all the key te…chnologies and applic.
Lingua: Inglese
Editore: Springer, Springer Mär 2021 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type f…erroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 440 pp. Englisch.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND.
