Soft Cover. Condizione: Acceptable. Ex-library with the usual features. Library label on front cover. The interior is clean and tight. Several pages have corner bent. Binding is good. Cover shows light edge wear and has one corner bent. Ex-Library.
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 32,25
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 33,67
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Aggiungi al carrelloCondizione: New.
Condizione: New. 1st edition NO-PA16APR2015-KAP.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 34,39
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Aggiungi al carrelloCondizione: New. In English.
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 33,23
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 37,75
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Morgan and Claypool Publishers, 2005
ISBN 10: 1598290045 ISBN 13: 9781598290042
Da: The Book Spot, Sioux Falls, MN, U.S.A.
Paperback. Condizione: New.
Lingua: Inglese
Editore: Springer International Publishing, 2007
ISBN 10: 3031014243 ISBN 13: 9783031014246
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 29,95
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
Da: preigu, Osnabrück, Germania
EUR 29,10
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Hf-Based High-k Dielectrics | Process Development, Performance Characterization, and Reliability | Young-Hee Kim (u. a.) | Taschenbuch | Synthesis Lectures on Solid State Materials and Devices | x | Englisch | 2007 | Springer | EAN 9783031014246 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Da: Majestic Books, Hounslow, Regno Unito
EUR 39,64
Quantità: 4 disponibili
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Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 41,63
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