Da: Chiron Media, Wallingford, Regno Unito
EUR 334,27
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Aggiungi al carrelloHardcover. Condizione: New.
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 548.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 432,21
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Aggiungi al carrelloCondizione: New. pp. 548.
Da: moluna, Greven, Germania
EUR 320,81
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Aggiungi al carrelloGebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Doneker, J.Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This .
Da: Majestic Books, Hounslow, Regno Unito
EUR 391,83
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Aggiungi al carrelloCondizione: New. pp. 548 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam This item is printed on demand.
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
EUR 423,33
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Aggiungi al carrelloHRD. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Da: PBShop.store US, Wood Dale, IL, U.S.A.
EUR 444,52
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Aggiungi al carrelloHRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 548,37
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Aggiungi al carrelloBuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.