Influence temperature microelectronics system di lall pradeep (27 risultati)

Hardcover. Condizione: Fair. No Jacket. 1st Edition. This book is seriously flawed by the fact that pages 289 to 307 function as an insert. They are completely separated from the binding. But the book is all there and is otherwise in new condition. There are no tears or signs of wear to the clean pages or the cover.…

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Hardcover. Condizione: Near Fine. Condizione sovraccoperta: No Jacket as Issued. 1st. 1st printing; glossy pictorial c; 307 clean, unmarked pages. B/W Photos; Diagrams, Etc (illustratore).

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Paperback. Condizione: Brand New. 336 pages. 10.00x7.01x0.67 inches. In Stock.

Condizione: Very Good. 1st Edition. Former library copy. Pages intact with possible writing/highlighting. Binding strong with minor wear. Dust jackets/supplements may not be included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.…

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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs.The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture.The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The.…