Hardcover. Condizione: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
Hardcover. Condizione: Fine. No Jacket. 1st Edition. Springer-Verlag pictorial hardcover sans jacket (as issued), 1989, clean/tight, No marks or signs of use and No "shelf wear"; (Fine). We will bubble wrap the book and ship it in a New BOX- Not a plastic bag like the zombie sellers.
EUR 31,42
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has soft covers. In good all round condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,600grams, ISBN:9780070021532.
Lingua: Inglese
Editore: McGraw Hill Higher Education, 1987
ISBN 10: 0070021074 ISBN 13: 9780070021075
Da: Ammareal, Morangis, Francia
EUR 31,29
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Bon. Ancien livre de bibliothèque avec équipements. Couverture différente. Edition 1987. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Different cover. Edition 1987. Ammareal gives back up to 15% of this item's net price to charity organizations.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 54,00
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 56,64
Quantità: 14 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 54,31
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: California Books, Miami, FL, U.S.A.
EUR 57,60
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condizione: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Prima edizione
EUR 31,89
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 51,56
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 58,36
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 56,95
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 59,56
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
EUR 56,40
Quantità: 10 disponibili
Aggiungi al carrelloPF. Condizione: New.
Editore: Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Da: Antiquariaat Ovidius, Bredevoort, Paesi Bassi
EUR 24,00
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Gebraucht / Used. 1986. Hardcover. xv,222pp.
Condizione: New. pp. 300.
Lingua: Inglese
Editore: World Scientific Publishing Company 1/1/1987, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: BargainBookStores, Grand Rapids, MI, U.S.A.
Paperback or Softback. Condizione: New. Introd to Semiconductor Device Modelling. Book.
EUR 59,05
Quantità: 1 disponibili
Aggiungi al carrelloGood. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.
Lingua: Inglese
Editore: World Scientific Pub Co Inc, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Revaluation Books, Exeter, Regno Unito
EUR 73,92
Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
EUR 87,85
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 77,65
Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 296 pages. 9.25x6.10x0.68 inches. In Stock.
EUR 91,97
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
EUR 89,66
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 106,53
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
EUR 91,96
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
EUR 50,25
Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Compound Semiconductor Device Modelling | Christopher M. Snowden (u. a.) | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781447120506 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
EUR 59,97
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: AussieBookSeller, Truganina, VIC, Australia
EUR 95,86
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves.com UK, London, Regno Unito
EUR 51,55
Quantità: 14 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.