simulation semiconductor devices processes (153 risultati)

hardcover. Condizione: Gut. 501 Seiten; 9783211827369.3 Gewicht in Gramm: 2.

16 x 24 cm. XII, 379 S. XII, 379 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Hardcover. Condizione: New. ISBN: 9783211728604.

Hard Cover. Condizione: Very Good. Condizione sovraccoperta: Very Good. First Edition. Hard Cover. Very Good/Very Good. First Edition. 8vo - over 7¾" - 9¾" tall. 652pp, generally fine copy. Size: 8vo - over 7¾" - 9¾" tall.

Condizione: New.

Condizione: Très bon. Simulation of Semiconductor Devices and Processes: Volume 5 | Selberherr et alii | Springer-Verlag, 1993, in-8 cartonnage éditeur, 504 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT14+].

Hard Cover. Condizione: Very Good. Condizione sovraccoperta: Very Good. First Edition. Hard Cover. Very Good/Very Good. First Edition. 8vo - over 7¾" - 9¾" tall. 662pp, generally fine copy. Size: 8vo - over 7¾" - 9¾" tall.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Fifth International Conference on Simulation of Semiconductor Devices and Processes' (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

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Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 428 | Sprache: Englisch | Produktart: Bücher.

Gebunden. Condizione: New.

Condizione: New. pp. 524.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Twelfth International Conference on Simulation of Semiconductor Processes and Devices' (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Condizione: New.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices.Topics include:- semiconductor equipment simulation- process modeling and simulation- device modeling and simulation of complex structures- interconnect modeling- integrated systems for process, device, circuit simulation and optimisation- numerical methods and algorithms- compact modeling and parameter extraction- modeling for RF applications- simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based .).

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Paperback. Condizione: Like New. Like NewLIKE NEW. book.

Hardcover. Condizione: New. ISBN:9783211728604.