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Hardback or Cased Book. Condizione: New. The 1st International Conference on Computational Engineering and Intelligent Systems. Book.
Lingua: Inglese
Editore: Berlin ; Heidelberg : Springer, 2011
ISBN 10: 3642163033 ISBN 13: 9783642163036
Da: Kepler-Buchversand Huong Bach, Weil der Stadt, Germania
EUR 29,00
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Aggiungi al carrelloGr.-8°, gebundene Ausgabe. Condizione: Sehr gut. XIII, 104 S. : graph. Darst. Gebraucht: sehr guter Zustand. Contents: Introduction / The MOS STructure / The MOS Oxide and its Defects / Review of Transport Mechanism in Thin Oxides / of MOS Devices / Experimental Techniques / Theoretical Approaches of Mobile Ions Density Distribution Determination / Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide / Index. Sprache: Englisch Gewicht in Gramm: 315.
Da: California Books, Miami, FL, U.S.A.
EUR 50,95
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Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 49,84
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Da: California Books, Miami, FL, U.S.A.
EUR 55,41
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Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 49,74
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 48,26
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Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 58,59
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 55,60
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 110,81
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Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 112,49
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Da: Revaluation Books, Exeter, Regno Unito
EUR 150,13
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Aggiungi al carrelloPaperback. Condizione: Brand New. 2011 edition. 117 pages. 9.25x6.10x0.28 inches. In Stock.
Da: Revaluation Books, Exeter, Regno Unito
EUR 151,75
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Aggiungi al carrelloHardcover. Condizione: Brand New. 104 pages. 9.00x6.25x0.75 inches. In Stock.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2011
ISBN 10: 3642163033 ISBN 13: 9783642163036
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, 2013
ISBN 10: 3642266886 ISBN 13: 9783642266881
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
Da: preigu, Osnabrück, Germania
EUR 95,70
Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Transport in Metal-Oxide-Semiconductor Structures | Mobile Ions Effects on the Oxide Properties | Hamid Bentarzi | Taschenbuch | xiv | Englisch | 2013 | Springer Vieweg | EAN 9783642266881 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 141,51
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Aggiungi al carrelloHardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg Jan 2011, 2011
ISBN 10: 3642163033 ISBN 13: 9783642163036
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 106,99
Quantità: 2 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Neuware -This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 120 pp. Englisch.
Da: Buchpark, Trebbin, Germania
EUR 64,31
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 186,25
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Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 186,24
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Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 202,81
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Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 215,80
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 213,23
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Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 241,00
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Aggiungi al carrelloPaperback. Condizione: New.
Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799840271 ISBN 13: 9781799840275
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 243,33
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Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Engineering Science Reference, 2020
ISBN 10: 1799869210 ISBN 13: 9781799869214
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 260,63
Quantità: 4 disponibili
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