Lingua: Inglese
Editore: Cambridge University Press, 1994
ISBN 10: 1558992154 ISBN 13: 9781558992153
Da: Moon Books NYC, New York, NY, U.S.A.
Prima edizione
Hardcover. Condizione: Very Good. 1st Edition. MRS (Materials Research Society) Symposium proceedings, vol 316 1075p. Hardcover. Exlibrary in very good condition.
Da: Buchpark, Trebbin, Germania
EUR 56,60
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Seiten: 648 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
EUR 236,34
Quantità: 15 disponibili
Aggiungi al carrelloHRD. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
EUR 248,36
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Aggiungi al carrelloCondizione: New.
EUR 236,32
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Da: Brook Bookstore On Demand, Napoli, NA, Italia
EUR 234,58
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Aggiungi al carrelloCondizione: new.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 242,05
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Aggiungi al carrelloCondizione: New. In.
EUR 259,05
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 258,26
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
EUR 263,76
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Aggiungi al carrelloGebunden. Condizione: New. Karen Maex, IMEC Fellow, Silicon Process and Device Technology Division, Leuven, Belgium & Professor at Katholieke Universiteit LeuvenMikhail R. Baklanov, Principal Scientist, Silicon Process and Device Technology Division, IMEC, Leuven, BelgiumIMEC is the .
Da: Majestic Books, Hounslow, Regno Unito
EUR 318,02
Quantità: 3 disponibili
Aggiungi al carrelloCondizione: New. pp. 508 Illus.
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Prima edizione
EUR 305,58
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Aggiungi al carrelloCondizione: New. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Editor(s): Baklanov, Mikhail R.; Maex, Karen; Green, Martin. Series: Wiley Series in Materials for Electronic & Optoelectronic Applications. Num Pages: 508 pages, Illustrations. BIC Classification: TJF. Category: (P) Professional & Vocational. Dimension: 249 x 177 x 34. Weight in Grams: 1102. . 2007. 1st Edition. Hardcover. . . . .
Condizione: New. pp. 508.
EUR 390,43
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Editor(s): Baklanov, Mikhail R.; Maex, Karen; Green, Martin. Series: Wiley Series in Materials for Electronic & Optoelectronic Applications. Num Pages: 508 pages, Illustrations. BIC Classification: TJF. Category: (P) Professional & Vocational. Dimension: 249 x 177 x 34. Weight in Grams: 1102. . 2007. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.
EUR 327,17
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Aggiungi al carrelloBuch. Condizione: Neu. Neuware - The dielectric properties of silicon dioxide (SiO2), such as high resistivity and excellent dielectric strength, have aided the evolution of microelectronics during the past 40 years. Silica films have been successfully used over this period for both gate and interconnect applications in ultra large-scale integration (ULSI) devices. Dielectric films for gate applications need to have a higher dielectric constant, while interconnect dielectric materials need to have a lower dielectric constant, compared with SiO2. In order to maintain the high drive current and gate capacitance required of scaled MOSFETs (metal-oxide-silicon field effect transistors), SiO2 gate dielectrics have decreased in thickness to less than 2 nm today, with a continued effort to shrink to the thickness below 1 nm. However, SiO2 layers thinner than 1.2 nm do not have the insulating properties required of a gate dielectric and ultrathin SiO2 gate dielectrics give rise to a number of problems, such as high gate leakage current and reliability degradation. Therefore, alternative gate dielectric materials are required.SiO2, having been the universal dielectric material for both gate and interlayer dielectric (ILD) applications for many years, must be replaced by materials with a higher dielectric constant for the gate applications and a reduced dielectric constant for interconnect applications. Replacements for silicon dioxide, such as HfO2, ZrO2, and Al2O3, for introduction as high-k dielectrics (described in the central section of the book), have material properties that are quite different compared with those of traditional dense SiO2 and these differences create many technological challenges that are the subject of intensive research. In addition, not only the development of new gate materials but also re-engineering of many technological processes is needed. For example, in the case of low-k materials (discussed in the first section of the book), active species formed during different technological processes diffuse into the pores and create severe damage. All these problems have been stimulating the development of new technological approaches, which will be dealt with in this book.This book presents an in-depth overview of novel developments made by scientific leaders in the microelectronics community. It covers a broad range of related topics, from physical principles to design, fabrication, characterization, and application of novel dielectric films. This book is intended for postgraduate level students, PhD students and industrial researchers, to enable them to gain insight into this important area of research.
EUR 431,61
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 508 pages. 9.75x6.75x1.50 inches. In Stock.
Lingua: Inglese
Editore: Institution of Engineering and Technology, 1995
ISBN 10: 0852968590 ISBN 13: 9780852968598
Da: Buchpark, Trebbin, Germania
EUR 1.166,22
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Seiten: 335 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
Lingua: Inglese
Editore: John Wiley & Sons Inc, New York, 2007
ISBN 10: 0470013605 ISBN 13: 9780470013601
Da: CitiRetail, Stevenage, Regno Unito
Prima edizione Print on Demand
EUR 257,91
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: new. Hardcover. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films. The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Da: Revaluation Books, Exeter, Regno Unito
EUR 342,55
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 508 pages. 9.75x6.75x1.50 inches. In Stock. This item is printed on demand.