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EUR 75,37
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Aggiungi al carrelloPaperback. Condizione: New.
Editore: Bologna: Alma Mater Studiorum, 1988, Bologna, 1988
Da: Glenbower Books, Dublin, Irlanda
Prima edizione
EUR 30,00
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Aggiungi al carrelloHard Cover. Condizione: Very Good. Condizione sovraccoperta: Very Good. First Edition. Hard Cover. Very Good/Very Good. First Edition. 8vo - over 7¾" - 9¾" tall. 662pp, generally fine copy. Size: 8vo - over 7¾" - 9¾" tall.
Condizione: New. pp. 672 Softcover reprint of the original 1st ed. 2015 edition NO-PA16APR2015-KAP.
EUR 101,84
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EUR 68,42
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EUR 52,31
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Aggiungi al carrellohardcover. Condizione: Sehr gut. 968 Seiten; 9783319631530.2 Gewicht in Gramm: 500.
Lingua: Inglese
Editore: Springer International Publishing, 2018
ISBN 10: 3319874861 ISBN 13: 9783319874869
Da: moluna, Greven, Germania
EUR 89,99
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Aggiungi al carrelloCondizione: New.
EUR 129,95
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Aggiungi al carrelloPaperback. Condizione: Brand New. reprint edition. 672 pages. 9.25x6.10x1.97 inches. In Stock.
EUR 72,55
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Physics of Semiconductor Devices | Massimo Rudan | Taschenbuch | xxiii | Englisch | 2016 | Springer | EAN 9781493946990 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
EUR 137,74
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Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Springer US, Springer New York, 2016
ISBN 10: 1493946994 ISBN 13: 9781493946990
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 86,70
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters aredevoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
Condizione: New. pp. 920.
EUR 131,27
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Aggiungi al carrelloPaperback. Condizione: Like New. Like New. book.
EUR 133,64
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EUR 95,15
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Physics of Semiconductor Devices | Massimo Rudan | Taschenbuch | xlviii | Englisch | 2018 | Springer | EAN 9783319874869 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer International Publishing, 2017
ISBN 10: 3319631535 ISBN 13: 9783319631530
Da: moluna, Greven, Germania
EUR 124,20
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Aggiungi al carrelloGebunden. Condizione: New.
Lingua: Inglese
Editore: Springer International Publishing, Springer Aug 2018, 2018
ISBN 10: 3319874861 ISBN 13: 9783319874869
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Neuware - This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.
EUR 154,93
Quantità: 1 disponibili
Aggiungi al carrellopaperback. Condizione: New. New. book.
Condizione: New. pp. 866.
Lingua: Inglese
Editore: Springer International Publishing, Springer International Publishing, 2017
ISBN 10: 3319631535 ISBN 13: 9783319631530
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 149,79
Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.
EUR 229,53
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 2nd edition. 968 pages. 9.25x6.10x2.44 inches. In Stock.
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Da: SMASS Sellers, IRVING, TX, U.S.A.
Condizione: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
Da: SMASS Sellers, IRVING, TX, U.S.A.
Condizione: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. 1st ed. 2023 edition 092 NO-PA16APR2015-KAP.
Da: Brook Bookstore On Demand, Napoli, NA, Italia
EUR 326,37
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: new.
Da: Majestic Books, Hounslow, Regno Unito
EUR 366,05
Quantità: 4 disponibili
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Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 372,21
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New.