Da: GreatBookPrices, Columbia, MD, U.S.A.
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Da: GreatBookPrices, Columbia, MD, U.S.A.
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Editore: American Academy of Political, 1907
Da: Books From California, Simi Valley, CA, U.S.A.
Hardcover. Condizione: Good. Ex-library copy with usual markings. Shows minor wear.
Lingua: Tedesco
Editore: Klett Sprachen GmbH; 1., Edition (13. Januar 2010), 2010
ISBN 10: 3125496012 ISBN 13: 9783125496019
Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 22,32
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Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 153,41
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Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 165,72
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Aggiungi al carrelloCondizione: New. In.
Condizione: New.
Lingua: Inglese
Editore: Business Science Reference, 2014
ISBN 10: 1466664533 ISBN 13: 9781466664531
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EUR 205,51
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Lingua: Inglese
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ISBN 10: 1466664533 ISBN 13: 9781466664531
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EUR 197,73
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Lingua: Inglese
Editore: Business Science Reference, 2014
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EUR 197,72
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Da: preigu, Osnabrück, Germania
EUR 140,10
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Advanced Gate Stacks for High-Mobility Semiconductors | Athanasios Dimoulas (u. a.) | Taschenbuch | Springer Series in Advanced Microelectronics | xxii | Englisch | 2010 | Springer | EAN 9783642090714 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Condizione: New. pp. 408.
Lingua: Inglese
Editore: Business Science Reference, 2014
ISBN 10: 1466664533 ISBN 13: 9781466664531
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Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 160,49
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Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 168,73
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
Lingua: Inglese
Editore: Business Science Reference, 2014
ISBN 10: 1466664533 ISBN 13: 9781466664531
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 220,94
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 214,00
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Like New. Like New. book.
EUR 246,10
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Condizione: As New. Unread book in perfect condition.
Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 250,68
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Aggiungi al carrelloHardback. Condizione: New.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, 2007
ISBN 10: 3642090710 ISBN 13: 9783642090714
Da: Revaluation Books, Exeter, Regno Unito
EUR 237,72
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Aggiungi al carrelloPaperback. Condizione: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.
EUR 246,32
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