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Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringDa: Feldman's Books, Menlo Park, CA, U.S.A.
Valutazione del venditore 4 su 5 stelle
Prima edizione
Hardcover. Condizione: Very Fine. First Edition. No markings.
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Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Optimon Books, Gravesend, KENT, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 75,02
Spedizione EUR 17,34
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Good. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. Previous owner's name to ffep, otherwise very good.
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Modeling and Characterization of Rf and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Optimon Books, Gravesend, KENT, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 82,17
Spedizione EUR 17,34
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Fair. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
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Modeling and Characterization of Rf and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 107,73
Spedizione EUR 2,24
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: California Books, Miami, FL, U.S.A.
Valutazione del venditore 4 su 5 stelle
EUR 110,08
Spedizione gratuita
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Modeling and Characterization of Rf and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 109,66
Spedizione EUR 2,24
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 102,43
Spedizione EUR 13,85
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press 2011-06-30, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Chiron Media, Wallingford, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 100,68
Spedizione EUR 17,91
Spedito da Regno Unito a U.S.A.Quantità: 10 disponibili
Aggiungi al carrelloPaperback. Condizione: New.
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Modeling and Characterization of Rf and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 102,41
Spedizione EUR 17,34
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Valutazione del venditore 5 su 5 stelle
Prima edizione
EUR 117,29
Spedizione EUR 10,50
Spedito da Irlanda a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . .
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Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Rarewaves.com USA, London, LONDO, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 131,52
Spedizione gratuita
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
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Modeling and Characterization of Rf and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 115,25
Spedizione EUR 17,34
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: BennettBooksLtd, Los Angeles, CA, U.S.A.
Valutazione del venditore 5 su 5 stelle
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
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Electromagnetic Band Gap Structures in Antenna Engineering
Libro 3 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 133,07
Spedizione EUR 2,24
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Electromagnetic Band Gap Structures in Antenna Engineering
Libro 3 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 134,84
Spedizione EUR 2,24
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Electromagnetic Band Gap Structures in Antenna Engineering
Libro 3 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 124,20
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Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Modeling and Characterization of RF and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press CUP, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 380 Index.
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Electromagnetic Band Gap Structures in Antenna Engineering
Libro 3 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 133,67
Spedizione EUR 17,34
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Kennys Bookstore, Olney, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 142,63
Spedizione EUR 8,91
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . . Books ship from the US and Ireland.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: California Books, Miami, FL, U.S.A.
Valutazione del venditore 4 su 5 stelle
EUR 162,50
Spedizione gratuita
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 152,04
Spedizione EUR 13,85
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Valutazione del venditore 5 su 5 stelle
EUR 174,41
Spedizione EUR 10,50
Spedito da Irlanda a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . .
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Electromagnetic Band Gap Structures in Antenna Engineering
Libro 3 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 180,23
Spedizione EUR 14,45
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock.
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Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Rarewaves.com UK, London, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 123,66
Spedizione EUR 75,16
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
-
Modeling and Characterization of RF and Microwave Power Fets
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
EUR 137,04
Spedizione EUR 63,28
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Kennys Bookstore, Olney, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 214,88
Spedizione EUR 8,91
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . . Books ship from the US and Ireland.
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Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringDa: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 217,49
Spedizione EUR 14,45
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
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Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
EUR 198,73
Spedizione EUR 64,17
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
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Modeling and Characterization of RF and Microwave Power FETs (Paperback)
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Valutazione del venditore 5 su 5 stelle
Paperback. Condizione: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
-
Modeling and Characterization of RF and Microwave Power FETs
Libro 1 di 20: Cambridge RF and Microwave EngineeringLingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 96,97
Spedizione EUR 14,45
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand.
