Da: Feldman's Books, Menlo Park, CA, U.S.A.
Prima edizione
Hardcover. Condizione: Very Fine. First Edition. No markings.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Optimon Books, Gravesend, KENT, Regno Unito
EUR 85,36
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Fair. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 111,06
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Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: California Books, Miami, FL, U.S.A.
EUR 113,45
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Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 113,01
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 104,19
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Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Cambridge University Press 2011-06-30, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Chiron Media, Wallingford, Regno Unito
EUR 101,64
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Aggiungi al carrelloPaperback. Condizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 104,17
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Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: BennettBooksLtd, Los Angeles, CA, U.S.A.
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 121,03
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Prima edizione
EUR 123,71
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . .
Lingua: Inglese
Editore: Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 139,26
Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 137,17
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Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 138,97
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 132,04
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Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press CUP, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 380 Index.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 138,83
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Kennys Bookstore, Olney, MD, U.S.A.
EUR 154,95
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . . Books ship from the US and Ireland.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: California Books, Miami, FL, U.S.A.
EUR 167,47
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 154,66
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
EUR 174,41
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . .
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: Revaluation Books, Exeter, Regno Unito
EUR 185,41
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock.
Lingua: Inglese
Editore: Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Rarewaves.com UK, London, Regno Unito
EUR 130,72
Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Kennys Bookstore, Olney, MD, U.S.A.
EUR 221,45
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . . Books ship from the US and Ireland.
Da: Revaluation Books, Exeter, Regno Unito
EUR 223,74
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Revaluation Books, Exeter, Regno Unito
EUR 100,91
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: THE SAINT BOOKSTORE, Southport, Regno Unito
EUR 108,74
Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback / softback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: Revaluation Books, Exeter, Regno Unito
EUR 136,71
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock. This item is printed on demand.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Majestic Books, Hounslow, Regno Unito
EUR 153,47
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 380 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: CitiRetail, Stevenage, Regno Unito
EUR 117,82
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.