Lingua: Inglese
Editore: Cambridge University Press, 2014
ISBN 10: 1107407982 ISBN 13: 9781107407985
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ISBN 10: 1107407982 ISBN 13: 9781107407985
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Aggiungi al carrelloPaperback. Condizione: New. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.
Lingua: Inglese
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ISBN 10: 1107407982 ISBN 13: 9781107407985
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ISBN 13: 9798757177748
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ISBN 10: 1605112291 ISBN 13: 9781605112299
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ISBN 10: 1107407982 ISBN 13: 9781107407985
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Aggiungi al carrelloPaperback. Condizione: New. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.
Lingua: Inglese
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ISBN 10: 1605112291 ISBN 13: 9781605112299
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.
Lingua: Inglese
Editore: Cambridge University Press, 2010
ISBN 10: 1605112291 ISBN 13: 9781605112299
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Aggiungi al carrelloCondizione: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Ramanathan, Shriram; Guha, Supratik; Mannhart, Jochen; Kummel, Andrew C.; Watanabe, Heiji; Thayne, Iain; Majhi, Prashant; Bonafos, Caroline; Fujisaki, Yoshihisa; Dimitrakis, P. Series: MRS Proceedings. Num Pages: Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 15. Weight in Grams: 364. . 2010. hardcover. . . . .
Lingua: Inglese
Editore: Cambridge University Press CUP, 2010
ISBN 10: 1605112291 ISBN 13: 9781605112299
Da: Books Puddle, New York, NY, U.S.A.
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ISBN 10: 1605112291 ISBN 13: 9781605112299
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ISBN 10: 1605112291 ISBN 13: 9781605112299
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Aggiungi al carrelloCondizione: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Ramanathan, Shriram; Guha, Supratik; Mannhart, Jochen; Kummel, Andrew C.; Watanabe, Heiji; Thayne, Iain; Majhi, Prashant; Bonafos, Caroline; Fujisaki, Yoshihisa; Dimitrakis, P. Series: MRS Proceedings. Num Pages: Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 15. Weight in Grams: 364. . 2010. hardcover. . . . . Books ship from the US and Ireland.
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Editore: Cambridge University Press, 2010
ISBN 10: 1605112291 ISBN 13: 9781605112299
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Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.
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ISBN 13: 9798757177748
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ISBN 10: 1107407982 ISBN 13: 9781107407985
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Aggiungi al carrelloPaperback. Condizione: new. Paperback. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 59 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 59 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.