9780521870665 - modeling and characterization of rf and microwave power fets di aaen, peter; plá, jaime a.; wood, john (16 risultati)
Lingua: Inglese
Editore: Cambridge, Cambridge 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Prima edizione
Da: Feldman's Books, Menlo Park, U.S.A.Feldman's Books
Contatta il venditoreVenditore con 4 stelleCondizione: Usato
EUR 70,90
EUR 3,87 spedizioneSpedito in U.S.A.Quantità: 1 disponibili
Hardcover. Condizione: Very Fine. First Edition. No markings.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: Optimon Books, Gravesend, Regno UnitoOptimon Books
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Buono
EUR 73,91
EUR 17,36 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Hardcover. Condizione: Good. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. Fairly good condition for year.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: BennettBooksLtd, Los Angeles, U.S.A.BennettBooksLtd
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EUR 128,27
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hardcover. Condizione: New. In shrink wrap. Looks like an interesting title.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: California Books, Miami, U.S.A.California Books
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EUR 164,85
Spedizione gratuitaSpedito in U.S.A.Quantità: Più di 20 disponibili
Condizione: New.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 153,37
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Condizione: New. In.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: Kennys Bookshop and Art Galleries Ltd., Galway, IrlandaKennys Bookshop and Art Galleries Ltd.
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EUR 174,41
EUR 10,50 spedizioneSpedito da Irlanda a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated.… hardcover. . . . .
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: Kennys Bookstore, Olney, U.S.A.Kennys Bookstore
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 217,98
EUR 9,03 spedizioneSpedito in U.S.A.Quantità: Più di 20 disponibili
Condizione: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated.… hardcover. . . . . Books ship from the US and Ireland.
Lingua: Inglese
Editore: Cambridge Univ Pr 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 220,87
EUR 14,47 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Hardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 183,92
EUR 64,17 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed… to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: Grand Eagle Retail, Bensenville, U.S.A.Grand Eagle Retail
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 175,24
Spedizione gratuitaSpedito in U.S.A.Quantità: 1 disponibili
Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis… methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Lingua: Inglese
Editore: Cambridge Univ Pr 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 167,84
EUR 14,47 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Hardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock. This item is printed on demand.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: THE SAINT BOOKSTORE, Southport, Regno UnitoTHE SAINT BOOKSTORE
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 173,20
EUR 23,28 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Hardback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Lingua: Inglese
Editore: Cambridge University Press 2015
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: moluna, Greven, Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 160,38
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text a…lso contains real-world examples.Über .
Lingua: Inglese
Editore: Cambridge University Press, Cambridge 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: CitiRetail, Stevenage, Regno UnitoCitiRetail
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 171,68
EUR 42,83 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis… methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Lingua: Inglese
Editore: Cambridge University Press 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 223,18
EUR 7,52 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 4 disponibili
Condizione: New. Print on Demand pp. xv + 362 150 Figures, Illus.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge 2007
Serie: Cambridge RF and Microwave Engineering, Libro 1 di 20. Libro 1 di 20 - Cambridge RF and Microwave Engineering
- Rilegato
- Print on Demand
Da: AussieBookSeller, Truganina, AustraliaAussieBookSeller
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 230,81
EUR 31,84 spedizioneSpedito da Australia a U.S.A.Quantità: 1 disponibili
Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis… methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
