9783540119869 - defect complexes in semiconductor structures: proceedings of the international school held in matrafüred, hungary, september 13-17, 1982 (lecture notes in physics): 175 (20 risultati)
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Defect Complexes in Semiconductor Structures : Proceedings of the International School Held in Mátrafüred, Hungary, September 13 - 17, 1982
Giber, J. (EDT); Beleznay, F. (EDT); Szep, I. C. (EDT); Laszlo, J. (EDT)
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Defect Complexes in Semiconductor Structures : Proceedings of the International School Held in Mátrafüred, Hungary, September 13 - 17, 1982
Giber, J. (EDT); Beleznay, F. (EDT); Szep, I. C. (EDT); Laszlo, J. (EDT)
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Defect Complexes in Semiconductor Structures : Proceedings of the International School Held in Mátrafüred, Hungary, September 13 - 17, 1982
Giber, J. (EDT); Beleznay, F. (EDT); Szep, I. C. (EDT); Laszlo, J. (EDT)
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Defect Complexes in Semiconductor Structures : Proceedings of the International School Held in Mátrafüred, Hungary, September 13 - 17, 1982
Giber, J. (EDT); Beleznay, F. (EDT); Szep, I. C. (EDT); Laszlo, J. (EDT)
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Defect Complexes in Semiconductor Structures: Proceedings of the International School Held in Mátrafuered, Hungary, September 13 17, 1982 (Lecture Notes in Physics)
Giber, J. (Editor) / Beleznay, F. (Editor) / Szep, I. C. (Editor) / Laszlo, J. (Editor)
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical an…d optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.
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Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 320 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
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Defect Complexes in Semiconductor Structures : Proceedings of the International School held in Mátrafüred, Hungary .,.,.
Giber, J. ; Beleznay, F. ; Szép, I. C. ; & László, J. ; editors :
Editore: Springer-Verlag, Berlin / Heidelberg, 1983
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orig. wrappers. Condizione: Minor wear. VG. 24x16cm, vi,307 pp., Series: Lecture Notes in Physics, 175. Full title reads: "Defect Complexes in Semiconductor Structures : Proceedings of the International School held in Mátrafüred, Hungary September 1317, 1982".
Lingua: Inglese
Editore: Springer, Springer Berlin Heidelberg Feb 1983, 1983
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures….- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP. 320 pp. Englisch.
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A technologist s view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of de…fect structures.- Electrical and optical .
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Condizione: New. Print on Demand pp. 320 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.
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Taschenbuch. Condizione: Neu. Defect Complexes in Semiconductor Structures | Proceedings of the International School Held in Mátrafüred, Hungary, September 13 - 17, 1982 | J. Giber (u. a.) | Taschenbuch | vi | Englisch | 1983 | Springer | EAN 9783540119869 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr.… 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- E…lectrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 320 pp. Englisch.
