Helms c r (64 risultati)

Condizione: Very Good. Very Good Condition. No CD/DVD(s) Included. Five star seller - Buy with confidence.

Paperback. Condizione: Very Good. 3rd. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Condizione: Very Good. Limited Copies Available - Very Good Condition - May have school stamp and/or student names - May have some cover wear - DOES NOT INCLUDE ANY CDs OR ACCESS CODES IF APPLICABLE.

Paperback. Condizione: Fair. Book in Fair condition.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Paperback. Condizione: very good. Used items may not include media like access codes or CDs. Fast shipping! Expedited orders take 1-3 business days! Media mail may take up to 5 business days.

Condizione: Good. 3 Edition. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.…

Paperback. Condizione: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Condizione: New.

Condizione: New. 288.

Condizione: As New. Unread book in perfect condition.

Condizione: New. 288.

Hardcover. Condizione: Very Good. No Jacket. 1st Edition. 154 pp. ; illustrated ; yellow cloth ; no dustjacket ; Contents: An unknown South: Spanish explorers and Southeastern Chiefdoms / Charles Hudson -- Reordering their world: A Caddoan ethnohistory / George Sabo -- The Cherokee in Arkansas: An invisible archaeological resource / Hester A Davis -- The Easter and Tug-of-War Lynchings and the Early Twentieth-Century black exodus from southwest Missouri / Butron L. Purrington, Penny Harter -- A structural analysis of the Chinese grocery store in the Mississippi Delta / Mary Jo Schneider, William M Schneider -- From memories and from the ground: Historical archaelogy at the Moser farmstead in the Arkansas Ozarks / Leslie C Stewart-Abernathy -- Frontier settlement in the Current River Valley: Variation in organizational planning / Cynthia R Price -- Camp meeting and Archaism in southwestern Arkansas / James A Rees -- Commentary / James Peacock. ; ex-lib, stamps, labels ; else VG. Book.…

paperback. Condizione: New. In shrink wrap. Looks like an interesting title.

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Condizione: As New. Unread book in perfect condition.

Condizione: As New. Unread book in perfect condition.

Condizione: As New. Unread book in perfect condition.

Condizione: New. In English.

Condizione: New. In English.

Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 524 | Sprache: Englisch | Produktart: Bücher | The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces. …

Condizione: New. In English.

Condizione: New. In English.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the 'International Topical Conference on the Physics of Si02 and its Interfaces' held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.…

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The first international symposium on the subject 'The Physics and Chemistry of Si02 and the Si-Si02 Interface,' organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on 'The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces. …