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The R. A. Weeks International Symposium on Science and Technology of SiO2 and Related Materials.
Da: Antiquariat am Flughafen, Berlin, Germania
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EUR 65,00
Spedizione EUR 105,00
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: sehr gut. Hardcover gr. 8°. xiii, 379 pages, name on title, some small marks of use, sehr gutes Exemplar. in englischer Sprache.
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Defects in Sio2 and Related Dielectrics : Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Better World Books: West, Reno, NV, U.S.A.
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Condizione: Good. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.
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Defects in Si02 and Related Dielectrics : Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: GreatBookPrices, Columbia, MD, U.S.A.
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EUR 228,08
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Spedito in U.S.A.Quantità: Più di 20 disponibili
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Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2)
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: California Books, Miami, FL, U.S.A.
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EUR 230,43
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Defects in Si02 and Related Dielectrics : Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: GreatBookPricesUK, Woodford Green, Regno Unito
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EUR 216,92
Spedizione EUR 17,36
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2)
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Ria Christie Collections, Uxbridge, Regno Unito
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EUR 225,40
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Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2)
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Ria Christie Collections, Uxbridge, Regno Unito
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EUR 225,40
Spedizione EUR 13,87
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Defects in Si02 and Related Dielectrics : Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: GreatBookPrices, Columbia, MD, U.S.A.
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EUR 239,47
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Dordrecht / Boston / London. Kluwer Academic Publishers. 2000., 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Da: Antiquariat am Flughafen, Berlin, Germania
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EUR 150,00
Spedizione EUR 105,00
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloSoftcover. Hardcover 624 pages. with Figures and tables. In good clean, solid condition. Nato Science Series II. Mathematics, Physics and Chemistry Vol. 2. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000. in englischer Sprache (in english).
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Defects in Si02 and Related Dielectrics : Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: GreatBookPricesUK, Woodford Green, Regno Unito
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EUR 247,31
Spedizione EUR 17,36
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Defects in SiO2 and Related Dielectrics
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Kluwer Academic Publishers, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
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EUR 255,39
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Spedito da Irlanda a U.S.A.Quantità: 15 disponibili
Aggiungi al carrelloCondizione: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . .
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Kluwer Academic Publishers, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
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EUR 260,59
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Spedito da Irlanda a U.S.A.Quantità: 15 disponibili
Aggiungi al carrelloCondizione: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . .
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Defects in SiO2 and Related Dielectrics
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Books Puddle, New York, NY, U.S.A.
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Condizione: New. pp. 636.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Springer Netherlands, Springer, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
EUR 223,11
Spedizione EUR 64,75
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Springer Netherlands, Springer Netherlands, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
EUR 225,03
Spedizione EUR 65,55
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
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Defects in SiO2 and Related Dielectrics
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Kluwer Academic Publishers, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Da: Kennys Bookstore, Olney, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . . Books ship from the US and Ireland.
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Defects in Si02 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Revaluation Books, Exeter, Regno Unito
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EUR 304,56
Spedizione EUR 23,15
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 632 pages. 9.50x6.50x1.50 inches. In Stock.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Kluwer Academic Publishers, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Da: Kennys Bookstore, Olney, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . . Books ship from the US and Ireland.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryEUR 180,07
Spedizione EUR 48,99
Spedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryEUR 180,07
Spedizione EUR 48,99
Spedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Springer Netherlands Dez 2000, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Valutazione del venditore 5 su 5 stelle
EUR 213,99
Spedizione EUR 23,00
Spedito da Germania a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Springer Netherlands Dez 2000, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Valutazione del venditore 5 su 5 stelle
EUR 213,99
Spedizione EUR 23,00
Spedito da Germania a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Springer Netherlands, Springer Dez 2000, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Valutazione del venditore 5 su 5 stelle
EUR 213,99
Spedizione EUR 60,00
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.
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Defects in SiO2 and Related Dielectrics: Science and Technology
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryLingua: Inglese
Editore: Springer Netherlands, Springer Netherlands Dez 2000, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Valutazione del venditore 5 su 5 stelle
EUR 213,99
Spedizione EUR 60,00
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.
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Defects in SiO2 and Related Dielectrics
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Majestic Books, Hounslow, Regno Unito
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EUR 295,44
Spedizione EUR 7,52
Spedito da Regno Unito a U.S.A.Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 636 Illus.
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Defects in SiO2 and Related Dielectrics
Libro 4 di 241: NATO Science Series II: Mathematics, Physics and ChemistryDa: Biblios, Frankfurt am main, HESSE, Germania
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EUR 299,07
Spedizione EUR 9,95
Spedito da Germania a U.S.A.Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 636.
